q?v~zy??q?v?_ra]q{??qcabeq HTD2A80AS HTD2A80AS 3 quadrants 2a triac v drm = 1000 v i t(rms) = 2 a i tsm = 17 a i gt = 10ma absolute maximum ratings (t j =25 e unless otherwise specified ) symbol parameter conditions ratings unit v drm repetitive peak off-state voltage sine wave, 50/60hz, gate open 1000 v v rrm repetitive peak reverse voltage 1000 v v dsm non-repetitive surge peak off-state voltage 1100 v v rsm non-repetitive peak reverse voltage 1100 v i t(rms) r.m.s. on-state current full sine wave, t c = 95 o c2a i tsm non-repetitive surge peak on-state current full sine wave, 50hz/60hz 16/17 a i 2 t fusing current t = 10ms 1.28 a 2 s p gm forward peak gate power dissipation t j = 80 c 1w p g(av) forward average gate power dissipation t j = 80 c 0.2 w i gm peak gate current tp ? 2us, t j = 80 c 1a t j operating junction temperature -40~+125 o c t stg storage temperature -40~+150 o c features ? repetitive peak off-state voltage : 1000v ? r.m.s on?state current (i t(rms) = 2a) ? gate trigger current : 10ma ? dv/dt ? 500v/us ? high voltage blocking capability general description intended for use in ac static switching and industrial control systems, driving low power highly inductive load like solenoid, pump, fan ad micro-motor. d-pak 1.t1 2. t2 3. g 2 1 3 symbol
q?v~zy??q?v?_ra]q{??qcabeq HTD2A80AS thermal characteristics electrical characteristics (t j =25 e unless otherwise specified ) symbol parameter conditions min typ max unit i drm repetitive peak off-state current v d = v drm t j =25 o c- - 10ua t j =125 o c - - 500 ua i rrm repetitive peak reverse current v r = v rrm t j =25 o c- - 10ua t j =125 o c - - 500 ua i gt gate trigger current v d = 12v, r l =30 ? 1+ - - 6 ma 1-, 3- - - 10 ma v gt gate trigger voltage v d = 12v, r l =30 ? 1+, 1-, 3- - - 1.5 v v gd non-trigger gate voltage v d = 2/3v drm , r l =3.3k ? , t j =125 o c 0.2 - - v i l latching current i g = 1.2i gt 1+, 3- - - 15 ma 1- - - 25 ma i h holding current i t = 100ma - - 10 ma v tm peak on-state voltage i t = 2a, tp = 380us - - 1.6 v dv/dt critical rate of rise of off-state voltage v d = 2/3 v drm , gate open, t j =125 o c 500 - - v/us symbol parameter conditions min typ max unit r jc thermal resistance junction to case 4.5 o c/w
q?v~zy??q?v?_ra]q{??qcabeq HTD2A80AS typical characteristics fig 1. r.m.s. current vs. power dissipation fig 2. r.m.s. current vs. case temperature fig 3. surge on state characteristics fig 4. surge on state current rating fig 5. gate trigger current vs. junction temperature fig 6. holding and latching current vs. junction temperature
q?v~zy??q?v?_ra]q{??qcabeq HTD2A80AS package dimension { v t y \ y g
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